如今，人们对研究耦合腔面发射激光器结构的兴趣逐渐增加。这种结构通过向主腔施加调制电的同时向每个反馈腔施加直流电来实现带宽提升。然而，单独驱动主腔对器件性能的影响尚未得到深入研究。为了更全面地了解耦合腔激光器，我们设计并制备了边长为30 μm×30 μm的方形横向耦合腔VCSEL，并研究了在方形横向耦合腔中单独驱动主腔时器件性能的变化。室温下，-3 dB带宽达30.1 GHz，在非归零调制下，在背对背传输速率40 Gbit/s时获得清晰的眼图，相对强度噪声值为-160 dB/Hz。证明了反馈腔在不加驱动的条件下仍会对主腔的性能提供正向作用。设计的TCC-VCSEL器件只需要一个电源驱动，使其适用于高密度集成，为封装集成应用提供了新的思路。

光子晶体面发射激光器（PCSEL）利用二维光子晶体光栅的布拉格共振实现面发射激光，具有其独特的优势，包括单模性能、在片测试、高功率、低发散角等。相比垂直腔面发射激光器（VCSEL），PCSEL有将近两倍的有源区光限制因子，展现出高速运行的潜力。本文探讨了PCSEL的基本结构和工作原理，并详细分析了影响PCSEL激光器实现高速性能的关键因素。随后，文章系统地介绍了近年来研究者们为实现PCSEL高速性能所做的努力，重点聚焦于通过增强PCSEL的面内限制来缩小激光腔，并提供了相关的研究方向和指导。

展示了高速直接调制850 nm氧化物限制垂直腔面发射激光器（VCSEL）的结果。优化设计应变InGaAs/AlGaAs量子阱以实现高微分增益，通过表面刻蚀来调节光子寿命实现响应平坦化。研制的氧化物孔径约7 μm的VCSEL具有平坦的频率响应，3 dB调制带宽为24 GHz，相对噪声强度值-155 dB/Hz，未采用任何预加重和均衡技术情况下PAM4调制数据传输速率达80 Gb/s。

垂直腔面发射激光器(VCSEL)具有低成本、低阈值、高速率和低功耗等优点，在短距离光互连中有着重要的应用。随着大数据、超级计算机技术的发展，短距离光互连性能需求越来越高，从而对高速调制的850 nm VCSEL技术提出了更高要求。从带宽限制机理、调制新方法两方面详细回顾了高速850 nm VCSEL技术最新进展，对技术发展趋势进行了总结与展望。

A modified spectral beam combining (SBC) approach based on double asymmetrical filters was proposed. By using this scheme, the high-order lateral modes at the edge of the far-field pattern can be suppressed in the external cavity, and the beam quality in the slow-axis direction was improved from 16.1 to 13.4 compared to the conventional SBC. In the meanwhile, the electrical-to-optical efficiency from the modified SBC was more than 40% with an output power of 34.1 W, which is similar to that of the conventional SBC.

This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.

Far-field blooming, a serious far-field dependence on driving current, affects the stability of beam quality and applications of broad-area (BA) diode lasers. In this Letter, the lateral ridge waveguide (LRW) is introduced to BA lasers by a simple and cost-effective approach to control the far-field stability and beam divergence. The influences of LRW length on output power, near- and far-field, are investigated and it is found that the optimized LRW length is able to improve both the far-field blooming and output power. The mechanism behind this is analyzed and a 0.13°/A dependence of lateral divergence angle on the injection current is achieved.

Broad-area diode lasers usually supply high output power but low lateral beam quality. In this Letter, an on-chip combined angled cavity is proposed to realize narrow lateral far field patterns and high brightness. The influence of included angles, emitting facets on output power, and beam quality are investigated. It demonstrates that this V-junction laser is able to achieve a single-lobe far field at optimal cavity length with a 3.4 times improvement in brightness compared with Fabry–Perot (F-P) cavity lasers. The excited high-order modes at a high injection level reduce the brightness, but it is still 107% higher than that of F-P lasers.